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Overview of the ASM-HEMT Model

The ASM-HEMT model, a robust surface-potential based compact model for Gallium Nitride (GaN) High Electron Mobility Transistors, was developed as a joint effort between Indian Institute of Technology Kanpur and Macquarie University. The model was standardized following more than 5 years of rigorous research by teams at Indian Institute of Technology Kanpur (under Prof. Yogesh Singh Chauhan) and Macquarie University (under Prof. Sourabh Khandelwal). In January 2018, it was selected for funding as an industry standard by Silicon Integration Initiative’s Compact Model Coalition (CMC) - a conglomerate of key industry players encompassing the entire semiconductor industry supply chain – all the way from EDA tool developers to foundries.

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Key Attributes

The ASM-HEMT model has a surface potential based core which takes into account 2 sub-bands of the 2DEG at the interface of an AlGaN/GaN High Electron Mobility Transistor. To capture effects exhibited by real world devices, several models have been developed on top of this core including:

  • Non-linear Access Region Resistances
  • Mobility Degradation Models
  • Self Heating Models
  • Noise Models
  • Field Plate Models
  • Models for Conductance effects (CLM, DIBL, etc.)
  • Models for Trapping Phenomena
  • Models for Gate leakage - including Fowler-Nordheim and Poole-Frenkel effects

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