Title of Talk

Simulation of Crystal Growth in Heteroepitaxial systems

 

Abstract

Growth of single crystalline heteroepitaxial thin films like Ge/Si and InGaAs/GaAs for use in optoelectronic devices is typically carried out by deposition under ultra-high vacuum conditions. We simulate this growth using a lattice based Kinetic Monte Carlo simulation developed in our group. The role of elastic strain due to lattice mismatch between the film and substrate in the observed growth morpologies is examined using an atomistic model of elasticity. Using our simulations, we show how the surface features can be controlled by varying the anisotropic surface energy and the strength of the elastic interactions.

 

Figure. KMC simulations showing different morphologies formed as the growth parameters are changed

 

References:

1. Pinku Nath and Madhav Ranganathan, Phys. Rev. E, (submitted)

2. Pinku Nath and Madhav Ranganathan, Surf. Sci. 2012, 606, 1450

Madhav Ranganathan, Assistant Professor

 

Department of Chemistry, Indian Institute of Technology Kanpur, Kanpur-208016, INDIA

e-mail: madhavr@iitk.ac.in


Profile. Madhav Ranganathan obtained his PhD in 2003 from Stanford University. After subsequent post-doctoral work at the University of Maryland, College Park and CNRS, Marseille, France, he joined the Department of Chemistry, IIT Kanpur in July 2007. His main research interests are in the application of equilibrium and nonequilibrium statistical mechanics to the study of problems related to crystal growth, gene regulatory networks, biophysical problems and multicomponent phase behavior. The techniques used involve atomistic simulations and continuum modeling.

 

Selected Publications

1. Pinku Nath and Madhav Ranganathan, Phys. Rev. E, submitted

2. Priti Roy, Brijesh Kumar, Akhilesh Shende, Anupama Singh, Anil Meena, Ritika Ghoshal, Madhav Ranganathan and Amitabha Bandyopadhyay, PLoS ONE, 2013, 8

3. Madhav Ranganathan and John D. Weeks, Phys. Rev. Lett., 2013, 110, 055503

4. Pinku Nath and Madhav Ranganathan, Surf. Sci. 2012, 606, 1450

5. Madhav Ranganathan and John D. Weeks, J. Cryst. Growth, submitted.