Title of Talk

Nitrogen and Boron Rich Salts as High Energy Materials

 

Abstract

The nitrogen rich compounds are one of the interesting classes of compounds in High Energy Materials Science & Technology. Because they possess higher heat of formation and also they increase the amount of gaseous nitrogen release as exhaust product which is environmentally benign. Moreover, nitrogen rich compounds possess higher velocity of detonation and detonation pressure. These properties make them more interesting and important in the areas of propellants, explosives and pyrotechnics. However, nitrogen rich molecules are highly sensitive for handling which obstructs many such compounds from wide usage. For example, triazinetriazide (82.35%) which is one of the better performers in view of energetic properties such are density, heat of formation, velocity of detonation and detonation pressure. But the compound is sensitive to external stimuli which prevent its usage. Similarly, the hydrazine azide is one of the compounds containing high percentage of nitrogen (93.29%), but its volatile nature and moisture sensitivity hinders its usage. Unlike nitrogen rich compounds, boron based compounds are less sensitive towards external stimuli. Boron and aluminiumpowder (preferably submicron sized particles) and boron containing compounds as additives are used in propellant and explosive composition due to their high energy potential. However, the problem of poor ignitability of boron and extensive surface oxidation of aluminium particles prevents its application in space and defense requirements. We have synthesized compounds/ salts which are rich in both nitrogen and boron and studied their properties related to high energy materials application.

 

References:

1. Sekher Reddy, G.; HanumanthaRao, M.; Muralidharan, K. Dalton Trans., 2013, 42, 8420

2. HanumanthaRao, M.; Muralidharan, K. Dalton Trans., 2013, 42, 8854

3. Srinivas, D.; Vikas, G. D.; Muralidharan, K.; Jenkins, H. D. B. Chem.- An Asian J. 2013, 8, 1023

4. Vikas, G. D.; Ghule, Srinivas, D.; Muralidharan, K. Asian J Org. Chem. 2013, DOI:10.1002/ajoc.201300079

5. Srinivas, D.; Vikas, G. D.;Tewari, S. P.; Muralidharan, K. Chem. Eur. J., 2012, 18, 15031

Krishnamurthi Muralidharan, Associate Professor

 

School of Chemistry, University of Hyderabad,

Hyderabad-500046

INDIA

e-mail: murali@uohyd.ac.in


Profile.

Ph.D. [Chemistry] (July 1998 – Aug 2003) Indian Institute of Technology [IIT] – Kanpur.

M. Sc. [Applied Chemistry] (July 1995 – May 1997) College of Engineering, Anna University, Chennai.

Research Interest. Design and synthesis inorganic materials with prominence to the main-group elements aimed to address the fundamental issues pertaining to the efficiency of the devices for Energy Harvesting, Energy Storage and Energy Release.

Nano materials: Search for a better synthetic methods for the production of nanoparticles with emphasis to major issues relating the application requirements. Preparation of semiconductor materials for solar energy harvesting. Materials for spontaneous and controlled energy release (Al, B and transition metal nanoparticles).

Small molecules: Metal complexes and their catalytic activity in synthetic chemistry.Synthesis of cyclic carbonates from carbondioxide.Synthesis of small molecules and salts which are rich in nitrogen and boron contents for a potential application in high energy material science and technology.

Polymers: Synthesis of polymers with special emphasis to main-group elements.Synthesis of polycarbonates from carbondioxide. Polymer electrolytes: Synthesis of polyethers with porous structural mimic network for lithium ion conductivities.

 

Selected Publications

1. Sekher Reddy, G.; HanumanthaRao, M.; Muralidharan, K. Dalton Trans., 2013, 42, 8420

2. HanumanthaRao, M.; Muralidharan, K. Dalton Trans., 2013, 42, 8854

3. Srinivas, D.; Vikas, G. D.;Tewari, S. P.; Muralidharan, K. Chem. Eur. J., 2012, 18, 15031

4. Ganesh Kumar, B.; Muralidharan, K. J. Mater. Chem. 2011, 21, 11271

5. Sekher Reddy G.; Muralidharan, K. Nanoscale 2010, 2, 976