VLSI design will soon use transistors whose size will be as small as 10nm. The aim of this short course is to educate and train bright minds on different aspects of Nano-transistors. Modeling especially compact modeling is the heart of circuit simulation. TCAD simulations are used for early device design and to understand the internal physics of transistor. Electrical characterization includes current and capacitance voltage measurement of transistor. RF measurement is an exciting area which involves understanding of devices as well as high frequency effects.
This short course will cover various topics in modeling, simulation and characterization of transistors especially at nanoscale.

Topics:
(1) VLSI design and Nanoelectronics, (2) Physics and Operation of MOSFET, (3) SPICE and Circuit simulation, (4) TCAD simulation: Theory and demonstration, (5) Compact Modeling: Theory and demonstration, (6) Scaling and Moore's Law, (7) Nano-Transistors: FinFET, FDSOI, Negative Capacitance FET, Nanosheet FETs, 2D-FETs etc. (8) Characterization: Current and capacitance measurement, (9) RF CMOS and GaN High Electron Mobility Transistors

Hands-on Sessions:
(1) Verilog-A coding, (2) SPICE ckt. Simulation, (3) TCAD Simulation, (4) Parameter Extraction

• The tentative program is available on this link (click here).

• Faculty members
• Practicing engineers from industry and research labs
• Students