Registration

Participants are required to register themselves through the GIAN portal.

Step1

APPLY HERE

One time registration fee for GIAN : ₹ 500

Step2

Once registered, search for the High Frequency Device Characterization and Modeling for THz applications course and register for it.

Step3

Registration fee for the course

Participants from abroad: US $500/-
Faculty: ₹ 3,000/-
Industry/R&D Labs: ₹ 10,000/-
Students: ₹ 1,000/-

NOTE: The above fee includes all instructional materials, computer use for tutorials and assignments, laboratory equipment usage charge. Accommodation will be provided on a payment basis. Please let us know a week prior to your arrival in case you need accommodation.

  • Confirmed Registrations 4
  • Anindya Bose, Indian Institute of Information Technology, Allahabad
  • Dominic Mathew.A, Karunya University, Coimbatore
  • R.Ragland Samuvel, Karunya University, Coimbatore
  • Ankita Deo, Indira Gandhi Delhi Technical University for Women, Delhi
  • Meena Panchore, IIITDM, Jabalpur
  • Kanchan Cecil, IIITDM, Jabalpur
  • Shivam Saxena, Jiwaji University, Gwalior
  • Dinesh Kushwaha, SGSITS Indore
  • Priyanka Bhalse, SGSITS Indore
  • Krati Laad, SGSITS Indore
  • Shivendra Singh, SGSITS Indore
  • Sourabh Jindal, IIT Roorkee
  • Abhishek Sahu, IIT Jodhpur
  • Afaq Ahmed, ZHCET AMU
  • Mandar Bhoir, IIT Gandhinagar
  • Abhishek Upadhyay, NIEC New Delhi
  • Ashutosh Srivastava, IIT(ISM) Dhanbad
  • Barsha Jain, ABV-IIITM Gwalior
  • Aditya Mishra, Badaun, UP
  • Ahmad Khusro, JMI Delhi
  • Prakash Chaurasia, NIT Agartala
  • Deepak Kumar Panda, NIT Silchar
  • Ahtisham Ul Haq, IIT Kanpur
  • Amol Gaidhane, IIT Kanpur
  • Raghvendra Dangi, IIT Kanpur
  • Ravi Goel, IIT Kanpur
  • Sudip Ghosh, IIT Kanpur
  • Achintya Priydarshi, IIT Kanpur
  • Shalini Tomar, IIT Kanpur

Topics

This course will cover variety of topics related to THz devices such as – Introduction to THz Electronics and applications, Measurement challenges at high frequencies, calibration and de-embedding techniques, High frequency/speed devices – MOSFET, Diode and HBTs, Circuit design in THz regime and device modeling, Parameter extraction procedure, Electro-thermal effects and their characterization with pulse, DC, AC and RF measurements, Next generation THz devices: Graphene and 2D-devices, Opportunities, challenges and solutions in THz devices and circuits. Course participants will learn these topics through lectures and hands-on experiments. Also case studies and assignments will be shared to stimulate research motivation of participants.

Agenda

Modelling
  • Introduction to THz Electronics and Applications
  • Bipolar Basics
  • Second Order Effects
  • Frequency Behavior
  • Technology: Basics and Advanced
  • Fundamental Model Equation: The GICCR
  • Where are the parameters?
    - Equivalent Circuit
    - Transfer Current
  • How to get the parameters?
    - Optimization methods
    - Capacitances & Transfer current & Base current & Resistances & Transit time
  • Results
HF Characterization
  • Calibration: Basics
  • De-Embedding: Test Structures and Parasitics Determination
  • On-Wafer Calibration
  • Improved on Wafer Calibration
Electro-Thermal Modelling
  • Nodal Approach
  • Solving the Heat Equation with the Quadrupole Approach
  • Physics Based Electro-thermal Model And Equivalent Network
  • Electro-thermal Characterization: Pulsed and AC
  • TCAD Modelling With Emphasis on BEOL
  • Thermal Coupling
Reliability & Beyond HBT
  • Compact Modelling of InP HBT with HiCuM
  • Results of Storage Accelerated Aging Test
  • Physical Investigation of Aging Mechanisms
  • Extension of the HiCuM Model
  • Results on a Circuit Level
  • Roadmap of Semiconductor Industry
  • New Material for replacing Silicon: Graphene? And the Graphene Hype
  • Graphene Fabrication Techniques
  • The Graphene Transistors
  • Graphene Based Circuits
  • Applications
  • 2D-electronics
WHO SHOULD ATTEND
  • An Electronics Engineer Or Research Scientist Interested In Semiconductor Devices, High Frequency Or RF/THz Electronics.
  • A Practicing Engineer Working In The Field Of RF Device Modeling, Measurements, Parameter Extraction Or Circuit Design.
  • An Executive, Engineer Or Researcher From Manufacturing, Service And Government Organizations Including R&D Laboratories.
  • A Student Or Faculty From Academic Institution Interested In Learning How To Do Research In The Broad Area Of High Frequency Electronics.
SPEAKERS - GIAN COURSE
Prof. Thomas Zimmer
Professor
IMS-BORDEAUX
Dr. Yogesh Singh Chauhan
Associate Professor
IIT-Kanpur
Dr. M. Jaleel Akhtar
Associate Professor
IIT-Kanpur
SPEAKERS - COMPACT MODELING WORKSHOP
Dr. Abhisek Dixit
Associate Professor
IIT-Delhi
Dr. Trupti Ranjan Lenka
Assistant Professor
NIT Silchar
Dr. Aditya Sankar Medury
Assistant Professor
IISER-Bhopal
Dr. Nihar Ranjan Mohapatra
Associate Professor
IIT-Gandhinagar
Dr. Jawar Singh
Associate Professor
IIIT-Jabalpur
Mr. H.S.Jattana
Group Head
SCL
Dr. Yogesh Singh Chauhan
Associate Professor
IIT-Kanpur
Dr. Sitangshu Bhattacharya
Assistant Professor
IIIT-Allahabad
Prof. Thomas Zimmer
Professor
IMS-BORDEAUX
Dr. Santosh Kumar Vishvakarma
Associate Professor
IIT-Indore
Mr Mohit Khanna
R&D Operating Manager
Keysight Technologies
Dr. Swaroop Ganguly
Associate Professor
IIT Bombay
Dr. Saurabh Lodha
Associate Professor
IIT-Bombay
Dr. Udayan Ganguly
Associate Professor
IIT-Bombay
Dr. Manoj Saxena
Assistant Professor
Delhi University