Research Scholar


Md Waseem Akram

Department of Electrical Engineering

Guide: Dr. Bahniman Ghosh

Research Topic



  • Currently pursuing Ph.D. (Signal Processing, Communications and Networks) in Department of Electrical
    Engg., Indian Institute of Technology Kanpur and secured 8.57 CPI till 3rd semester.
  • Completed M.Tech (Electronics & Communication Engg.) with 85% in 2011 from Jaypee Institute of
    Information Technology Noida.
  • Completed B.Tech (Electronics & Communication Engg.) with 68% marks in 2008 from Raj Kumar Goel
    Institute of Technology Ghaziabad affiliated to Uttar Pradesh Technical University Lucknow.



  • Bahniman Ghosh and Mohammad Waseem Akram, “Junctionless Tunnel Field Effect Transistor”, IEEE Electron Device Letters, vol. 34, no. 5, May 2013, 584-586. (SCI Imapct Factor: 2.789)

  • M. W. Akram, Bahniman Ghosh, “Junctionless silicon-nanowire gate-all-around tunnel field effect transistor”, Journal of Low Power Electronics, vol. 10, pp. 286-292, 2014. (Scopus Impact Factor: 0.485)

  • M. W. Akram, Bahniman Ghosh, “Analog performance of double gate junctionless tunnel field effect transistor”, Journal of Semiconductors, Vol. 35, No. 7, July 2014. (Indexed in Scopus-Elsevier)


Labs addresses: WL212

Lab Phone: 9760984755

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