| 1 |
S. Khandelwal, Y. S. Chauhan, T. A. Fjeldly, S. Ghosh, A. Pampori, D. Mahajan, R. Dangi, and S. A. Ahsan, "ASM GaN: Industry Standard Model for GaN RF and Power Devices - Part-I: DC, CV, and RF Model", IEEE Transactions on Electron Devices, 2019. |
| 2 |
S. A. Albahrani, D. Mahajan, J. Hodges, Y. S. Chauhan, and S. Khandelwal, "ASM GaN: Industry Model for GaN RF and Power Devices - Part-II: Modeling of Charge Trapping", IEEE Transactions on Electron Devices, 2019. |
| 3 |
A. Pampori, S. A. Ahsan, S. Ghosh, S. Khandelwal, and Y. S. Chauhan, "Physics-based Compact Modeling of MSM-2DEG GaN-based Varactors for THz Applications", IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Kobe, Japan, Mar. 2018. |
| 4 |
S. A. Ahsan, A. Pampori, S. Ghosh, S. Khandelwal, and Y. S. Chauhan, "A New Small-signal Parameter Extraction Technique for large gate-periphery GaN HEMTs", IEEE Microwave and Wireless Components Letters, Vol. 27, Issue 10, Oct. 2017. |
| 5 |
S. A. Ahsan, S. Ghosh, S. Khandelwal, and Y. S. Chauhan, "Physics-based Multi-bias RF Large-Signal GaN HEMT Modeling and Parameter Extraction Flow", IEEE Journal of the Electron Devices Society, Vol. 5, Issue 5, Sept. 2017. |
| 6 |
S. A. Ahsan, S. Ghosh, S. Khandelwal, and Y. S. Chauhan, "Pole-Zero Approach to Analyze and Model the Kink in Gain-Frequency Plot of GaN HEMTs", IEEE Microwave and Wireless Components Letters, Vol. 27, Issue 3, Mar. 2017. |
| 7 |
S. A. Ahsan, S. Ghosh, S. Khandelwal, and Y. S. Chauhan, "Analysis and Modeling of Cross-Coupling and Substrate Capacitance in GaN HEMTs for Power-Electronic Applications", IEEE Transactions on Electron Devices (Special Issue), Vol. 64, Issue 3, Mar. 2017. |
| 8 |
S. Ghosh, S. A. Ahsan, S. Khandelwal, A. Pampori, R. Dangi, and Y. S. Chauhan, "Physics Based Analysis and Modeling of Capacitances in a Dual Field Plated Power GaN HEMT", International Workshop on Physics of Semiconductor Devices (IWPSD), Delhi, India, Dec. 2017. |
| 9 |
S. A. Ahsan, S. Ghosh, S. Khandelwal, A. Pampori, R. Dangi, and Y. S. Chauhan, "A Scalable Physics-based RF Large Signal Model for Multi-Finger GaN HEMTs", International Workshop on Physics of Semiconductor Devices (IWPSD), Delhi, India, Dec. 2017. |
| 10 |
S. Khandelwal, S. Ghosh, S. A. Ahsan and Y. S. Chauhan, "Dependence of GaN HEMT AM/AM and AM/PM Non-Linearity on AlGaN Barrier Layer Thickness", IEEE Asia Pacific Microwave Conference (APMC), Kuala Lumpur, Malaysia, Nov. 2017. |
| 11 |
S. A. Ahsan, S. Ghosh, S. Khandelwal and Y. S. Chauhan, "Surface-potential-based Gate-periphery-scalable Small-signal Model for GaN HEMTs", IEEE Compound Semiconductor IC Symposium (CSICS), Miami, USA, Oct. 2017. |
| 12 |
S. A. Ahsan, S. Ghosh, A. Dasgupta, K. Sharma, S. Khandelwal, and Y. S. Chauhan, "Capacitance Modeling in Dual Field Plate Power GaN HEMT for Accurate Switching Behaviour", IEEE Transactions on Electron Devices, Vol. 63, Issue 2, Feb. 2016. |
| 13 |
S. Ghosh, S. A. Ahsan, A. Dasgupta, S. Khandelwal, and Y. S. Chauhan, "GaN HEMT Modeling for Power and RF Applications using ASM-HEMT", IEEE International Conference on Emerging Electronics (ICEE), Mumbai, India, Dec. 2016. |
| 14 |
S. Ghosh, A. Dasgupta, A. K. Dutta, S. Khandelwal, and Y. S. Chauhan, "Physics based Modeling of Gate Current including Fowler-Nordheim Tunneling in GaN HEMT", IEEE International Conference on Emerging Electronics (ICEE), Mumbai, India, Dec. 2016. |
| 15 |
S. A. Ahsan, S. Ghosh, S. Khandelwal, and Y. S. Chauhan, "Statistical Simulation for GaN HEMT Large Signal RF performance using a Physics-based Model", IEEE International Conference on Emerging Electronics (ICEE), Mumbai, India, Dec. 2016. |
| 16 |
A. Dasgupta, S. Ghosh, S. A. Ahsan, S. Khandelwal, N. Defrance, and Y. S. Chauhan, "Modeling DC, RF and Noise behavior of GaN HEMTs using ASM-HEMT Compact Model", IEEE International Microwave and RF Conference (IMaRC), Delhi, India, Dec. 2016. |
| 17 |
S. Ghosh, S. A. Ahsan, S. Khandelwal and Y. S. Chauhan, "Modeling of Source/Drain Access Resistances and their Temperature Dependence in GaN HEMTs", IEEE Conference on Electron Devices and Solid-State Circuits (EDSSC), Hong Kong, Aug. 2016. |
| 18 |
S. A. Ahsan, S. Ghosh, S. Khandelwal and Y. S. Chauhan, "Modeling of Kink-Effect in RF Behaviour of GaN HEMTs using ASM-HEMT Model", IEEE Conference on Electron Devices and Solid-State Circuits (EDSSC), Hong Kong, Aug. 2016. |
| 19 |
R. Nune, A. Anurag, S. Anand and Y. S. Chauhan, "Comparative Analysis of Power Density in Si MOSFET and GaN HEMT based Flyback Converters", IEEE International Conference on Compatibility and Power Electronics, Bydgoszcz, Poland, June 2016. |
| 20 |
S. Ghosh, A. Dasgupta, S. Khandelwal, S. Agnihotri, and Y. S. Chauhan, "Surface-Potential-Based Compact Modeling of Gate Current in AlGaN/GaN HEMTs", IEEE Transactions on Electron Devices, Vol. 62, Issue 2, Feb. 2015. |
| 21 |
S. Agnihotri, S. Ghosh, A. Dasgupta, A. Ahsan, S. Khandewal, and Y. S. Chauhan, "Modeling of Trapping Effects in GaN HEMTs", IEEE India Conference (INDICON), New Delhi, India, Dec. 2015. |
| 22 |
S. Ghosh, S. Agnihotri, S. A. Ahsan, S. Khandelwal, and Y. S. Chauhan, "Analysis and Modeling of Trapping Effects in RF GaN HEMTs under Pulsed Conditions", International Workshop on Physics of Semiconductor Devices (IWPSD), Bangalore, India, Dec. 2015. |
| 23 |
K. Sharma, S. Ghosh, A. Dasgupta, S. A. Ahsan, S. Khandelwal, and Y. S. Chauhan, "Capacitance Analysis of Field Plated GaN HEMT", International Workshop on Physics of Semiconductor Devices (IWPSD), Bangalore, India, Dec. 2015. |
| 24 |
S. A. Ahsan, S. Ghosh, J. Bandarupalli, S. Khandelwal, and Y. S. Chauhan, "Physics based large signal modeling for RF performance of GaN HEMTs", International Workshop on Physics of Semiconductor Devices (IWPSD), Bangalore, India, Dec. 2015. |
| 25 |
S. A. Ahsan, S. Ghosh, K. Sharma, A. Dasgupta, S. Khandelwal, and Y. S. Chauhan, "Capacitance Modeling of a GaN HEMT with Gate and Source Field Plates", IEEE International Symposium on Compound Semiconductors (ISCS), Santa Barbara, USA, June 2015.. |
| 26 |
A. Dasgupta, S. Ghosh, S. Khandelwal, and Y. S. Chauhan, "ASM-HEMT: Compact model for GaN HEMTs", IEEE Conference on Electron Devices and Solid-State Circuits (EDSSC), Singapore, June 2015. |
| 27 |
K. Sharma, A. Dasgupta, S. Ghosh, S. A. Ahsan, S. Khandelwal, and Y. S. Chauhan, "Effect of Access Region and Field Plate on Capacitance behavior of GaN HEMT", IEEE Conference on Electron Devices and Solid-State Circuits (EDSSC), Singapore, June 2015. |
| 28 |
C. Yadav, P. Kushwaha, S. Khandelwal, J. P. Duarte, Y. S. Chauhan, and C. Hu, "Modeling of GaN based Normally-off FinFET", IEEE Electron Device Letters, Vol. 35, Issue 6, June 2014. |
| 29 |
C. Yadav, P. Kushwaha, H. Agarwal, and Y. S. Chauhan, "Threshold Voltage Modeling of GaN Based Normally-Off Tri-gate Transistor", IEEE India Conference (INDICON), Pune, India, Dec. 2014. |
| 30 |
S. Khandelwal, C. Yadav, S. Agnihotri, Y. S. Chauhan, A. Curutchet, T. Zimmer, J.-C. Dejaeger, N. Defrance and T. A. Fjeldly, "A Robust Surface-Potential-Based Compact Model for GaN HEMT IC Design", IEEE Transactions on Electron Devices, Vol. 60, Issue 10, Oct. 2013. |
| 31 |
S. Agnihotri, S. Ghosh, A. Dasgupta, S. Khandewal, and Y. S. Chauhan, "A Surface Potential based Model for GaN HEMTs", IEEE PrimeAsia, Visakhapatnam, Dec. 2013. |
| 32 |
S. Khandelwal, Y. S. Chauhan, and T. A. Fjeldly, "Analytical Modeling of Surface-Potential and Intrinsic Charges in AlGaN/GaN HEMT Devices", IEEE Transactions on Electron Devices, Vol 59, Issue 8, Oct. 2012. |