'Admissions 2025-26 Semester-I Announcements Read More...
Welcome to the Department of Electrical Engineering (EE) at IIT Kanpur. The EE department is one of the oldest departments at IIT Kanpur. It was one of the first five departments with which IIT Kanpur started in 1960. Subsequently, the Advanced Centre for Electronics Systems (ACES) came into existence in early 1970 by a grant from the Ministry of Defence to undertake manpower training and to carry out research and development related to defense. Subsequently, several sponsored projects in many subject areas with large interdisciplinary content were handled through ACES. ACES is now an integral part of the EE department and houses the majority of EE laboratories and facilities. The department is currently the largest multidisciplinary department at IIT Kanpur. It covers practically all sub-disciplines in Electrical and Communication Engineering including Power Systems, Power Electronics, Microwaves, RF techniques, Microelectronics, VLSI, Photonics, Control Systems, Robotics, Speech, and Audio Processing, Computer Vision, Artificial Intelligence, Machine Learning, Wireless Communication, Computer Networks, Future wireless networks like 5G/6G, Wireless sensor networks, and IoT networks. Read more
Engineering the strain and neuromorphic performance of 2D-TMD transistors
Abstract- In recent years, researchers have leveraged the unique physical properties of layered two-dimensional (2D) van der Waals (vdW) materials, such as a wide range of thickness-dependent bandgaps and facile fabrication of heterostructures with defect-free heterointerfaces, for several electronic applications. At the same time, their optical and electrical properties can be controlled using strain tuning of band structure parameters because of their high tensile strength, as well as via electrostatic gating based tuning of carrier concentrations because of their ultra-thin nature.
This presentation will first describe recent results from our group on engineering the strain-modulated performance of transistors based on 2D vdW transition metal dichalcogenide (TMD) semiconductors. Specifically, an electrically actuated piezo-stack is shown to fine-tune optical and electrical parameters of MoS2 field-effect transistors with tensile as well as compressive strain, offering improved control and integration possibilities over existing mechanical methods. [1] Next, we will describe the use of independent electrostatic gating of contact and channel barriers in 2D TMD transistors towards realizing neuronal spiking behaviour, closely mimicking biological neurons with functionalities such as spike- frequency adaptation and post-inhibitory rebound, at a low energy consumption of 3.5 pJ/spike. [2]
Bio: Prof. Saurabh Lodha is the P. K. Kelkar Chair Professor at the Department of Electrical Engineering, Indian Institute of Technology (IIT) Bombay in India. He graduated from IIT Bombay in 1999 with a B. Tech (EE) followed by a Masters (ECE) and PhD (ECE) from Purdue University, USA, in 2001 and 2004 respectively. From 2005-2010 he worked at Intel Corporation in Portland, USA, on the research and development of 45, 32 and 22 nm Si CMOS technologies. He joined IIT Bombay in 2010 where he is also the PI of the IITB-OSU Frontier Research Center. His research interests span devices and materials in the areas of advanced CMOS technologies, 2D (opto)electronics and gallium oxide power electronics. He has been awarded the Swarna Jayanti fellowship (2017) and the Young Career Award (2020) by the Department of Science and Technology, Govt. of India, and the KLC Memorial Distinguished Lecture Award (2023) by IIT Delhi.
Speaker Name: Prof. Saurabh Lodha
Professor, Department of Electrical Engineering, IIT Bombay, Powai, Mumbai, India, 400076
E-mail: This email address is being protected from spambots. You need JavaScript enabled to view it.
Date and Time: 25, February 2025 10:30 AM-12:00 PM
Venue: ACES 214, ACES building
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Spot PhD Admissions - 2025-26 Semester I
Spot PhD admissions with on-campus interview
Announcements:
20 December 2024
Spot PhD Admissions - 2025-26 Semester I for current BTech and MTech students in CFTIs
Department of Electrical Engineering, IIT Kanpur is conducting spot admissions to the PhD programme for current BTech/MTech Students from CFTIs (Centrally funded Technical Institutes including IITs/IISc/NITs/IIITs/IISERs). If you are an administrator/faculty from a CFTI institute and are interested in inviting us for an on-campus admission drive, please contact us at This email address is being protected from spambots. You need JavaScript enabled to view it. . GATE score is waived off for all BTech/MTech candidates from CFTIs.
The admission brochure is available below:
PhD brochure for Spot Admissions
Our department has six specializations/streams in which a student can choose to apply. Students with background in electrical engineering may apply in the following streams:
- Control and Automation (CA)
- Power Engineering (PE)
Students with background in electronics/communications/instrumentation may apply in the following streams:
- Control and Automation (CA)
- Microelectronics and VLSI (MVLSI)
- Photonics (PH)
- RF and Microwave (RF)
- Signal Processing, Communication and Networks (SPCOM)
Interested students can directly apply for the spot admission by filling the following Google form:
Applicants in Final year BTech programme: https://forms.gle/fKRmAt2qHCig8h2z7
Applicants in Second year MTech programme: https://forms.gle/E6fTm1fP8aVpy3269
Students can join us for a live interaction on 06 January 2025 to learn more about the PhD programme at IITK EE department and spot admission procedures. The link will be shared with all the participants who have filled the above Google form.
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- Last Updated: Saturday, 21 December 2024 10:35