Electrical Engineering

Indian Institute of Technology Kanpur

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Welcome to Department of Electrical Engineering

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Department of Electrical Engineering Welcomes
NEW POSTGRADUATE STUDENTS 2024-25
(Semester - II), IIT Kanpur

Welcome to the Department of Electrical Engineering (EE) at IIT Kanpur. The EE department is one of the oldest departments at IIT Kanpur. It was one of the first five departments with which IIT Kanpur started in 1960. Subsequently, the Advanced Centre for Electronics Systems (ACES) came into existence in early 1970 by a grant from the Ministry of Defence to undertake manpower training and to carry out research and development related to defense. Subsequently, several sponsored projects in many subject areas with large interdisciplinary content were handled through ACES. ACES is now an integral part of the EE department and houses the majority of EE laboratories and facilities. The department is currently the largest multidisciplinary department at IIT Kanpur. It covers practically all sub-disciplines in Electrical and Communication Engineering including Power Systems, Power Electronics, Microwaves, RF techniques, Microelectronics, VLSI, Photonics, Control Systems, Robotics, Speech, and Audio Processing, Computer Vision, Artificial Intelligence, Machine Learning, Wireless Communication, Computer Networks, Future wireless networks like 5G/6G, Wireless sensor networks, and IoT networks. Read more

 
 

Faculty

 

Publications

 

Projects

 

Students

Department of Electrical Engineering, IIT Kanpur offers a PhD program in the following specializations:

  1. Microelectronics and VLSI (MVLSI)
  2. Power Engineering (PE)
  3. RF and Microwaves (RF)
  4. Signal Processing, Communication and Networks (SPCOM)
  5. Control and Automation (CA)
  6. Optoelectronics and Optical Communication (OPTEC)

For more information regarding the admission procedure, please visit

https://iitk.ac.in/ee/admissions

For more information regarding the program please refer to the PG manual

available here: https://iitk.ac.in/doaa/pg-manual

For any more clarifications, please contact

This email address is being protected from spambots. You need JavaScript enabled to view it.

The Electrical Engineering Department was one of the first few departments with which IIT Kanpur started in 1960.

Advanced Centre for Electronics Systems (ACES) came into existence in early 1970 by a grant from the Ministry of Defence to undertake manpower training and to carry out research and development related to defence. Subsequently, several sponsored projects in many subject areas with large interdisciplinary content were handled through ACES.

ACES is now an integral part of Electrical Engineering Department and houses majority of Electrical Engineering Laboratories and Facilities. Electrical Engineering Department is currently the largest multidisciplinary department at IIT Kanpur and covers practically all sub-disciplines under Electrical Power, Electronics and Communications.

Head of the Department
Prof. Yogesh Singh Chauhan
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  91-512-259-7454/ 7409 (Head's Office)
91-512-259-7164 (EE Office)

Contact for Faculty position aspirants:
Prof. Shubham Sahay
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Web-page co-ordinator:
Prof. Abhilash Patel
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DPGC Convener:
Prof. Imon Mondal
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DUGC Convener:
Prof. Suvendu Samanta
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Most Downloaded Papers in Popular Transactions and Journals

  • "Nonlinear Formation Control Strategies for Agents without Relative Measurements under Heterogeneous Networks" by A. Sen, S.R. Sahoo and M. Kothari, , International Journal of Robust and Nonlinear Control, vol. 28, no. 5, pp. 1653 - 1671, March 2018.
  • "Adaptive Low Rank Matrix Completion" by R. Tripathi, B. Mohan and K. Rajawat in IEEE Transactions on Signal Processing, vol. 65, no. 14, pp. 3603-3616, July 2017
  • "Performance Evaluation of 7-nm Node Negative Capacitance FinFET-Based SRAM" by Tapas Dutta,Girish Pahwa,Amit Ranjan Trivedi,Saurabh Sinha,Amit Agarwal,Yogesh Singh Chauhan,pp no.1161-1164 in June,2017
  • "A unified analytical drain current model for Double-Gate Junctionless Field-Effect Transistors including short channel effects" by Raksharam and A.K. Dutta in Solid-State Electronics,April 2017
  • "Analytical models for the 2DEG concentration and gate leakage current in AlGaN/GaN HEMTs" by Nadim Ahmed and A.K. Dutta in Solid-State Electronics, Vol.132, pp. 64-72,April 2017
  • "An Angularly Stable Dual-Band FSS with Closely Spaced Resonances using Miniaturized Unit Cell" by Saptarshi Ghosh and Kumar Vaibhav Srivastava in IEEE Microwave and Wireless Components Letters, vol. 27, no. 3, pp. 218-220, March 2017
  • "Pole-Zero Approach to Analyze and Model the Kink in Gain-Frequency Plot of GaN HEMTs" by Sheikh Aamir Ahsan,Sudip Ghosh,Sourabh Khandelwal,Yogesh Singh Chauhan, Vol.27, pp. 266-268,March 2017
  • "Asynchronous Optimization Over Heterogeneous Networks via Consensus ADMM" by S. Kumar, R. Jain, and K. Rajawat in IEEE Transactions on Signal and Information Processing over Networks, vol. 3, no. 1, pp. 114-129, Mar. 2017
  • "Compact Model for Ferroelectric Negative Capacitance Transistor With MFIS Structure" by Girish Pahwa, Tapas Dutta, Amit Agarwal, and Prof. Y. S. Chauhan in IEEE Transactions on Electron Devices, Vol. 64, no. 3, pp. 1366-1374, Mar. 2017
  • "Analysis and Modeling of Cross-Coupling and Substrate Capacitances in GaN HEMTs for Power-Electronic Applications" by Sheikh Aamir Ahsan, Sudip Ghosh, Sourabh Khandelwal, and Prof. Y. S. Chauhan in IEEE Transactions on Electron Devices, Vol. 64, no. 3, pp. 816-823, Mar. 2017
  • "Anomalous Transconductance in Long Channel Halo Implanted MOSFETs: Analysis and Modeling" by Harshit Agarwal, Chetan Gupta, Sagnik Dey, Sourabh Khandelwal, Chenming Hu, and Prof. Y. S. Chauhan in IEEE Transactions on Electron Devices, Vol. pp, no. 99, pp. 1-9, Jan. 2017
  • "Intelligent Condition Based Monitoring Using Acoustic Signals for Air Compressors" by Nishchal K Verma, Rahul K Sevakula, Sonal Dixit and Al Salour in IEEE Transactions on Reliability, vol. 65, no.1, pp. 291-309, 2016
  • "Analytical surface potential and drain current models of dual-metal-gate double-gate tunnel FETs (DMG-DGTFETs)" by Vishwa Prabhat and A.K. Dutta in IEEE Transactions on Electron Devices, Vol. 63, No. 5, pp. 2190-2196, 2016
  • "Analysis and Compact Modeling of Negative Capacitance Transistor with High ON-Current and Negative Output Differential Resistance—Part II: Model Validation" by Girish Pahwa, Tapas Dutta, Amit Agarwal, Sourabh Khandelwal, Sayeef Salahuddin, Chenming Hu, and Prof. Y. S. Chauhan in IEEE Transactions on Electron Devices, Vol. 63, no. 12, pp. 4986-4992, 2016
  • "Analysis and Compact Modeling of Negative Capacitance Transistor with High ON-Current and Negative Output Differential Resistance—Part I: Model Description" by Girish Pahwa, Tapas Dutta, Amit Agarwal, Sourabh Khandelwal, Sayeef Salahuddin, Chenming Hu, and Prof. Y. S. Chauhan in IEEE Transactions on Electron Devices, Vol. 63, no. 12, pp. 4981-4985, 2016
  • "Radial Basis Function Neural Network Nonlinear Equalizer for 16-QAM Coherent Optical OFDM" by S. T. Ahmad and Prof. P. K. Kumar in IEEE Photonics Technology Letters, Vol. 28, No. 22, pp. 2507-2510, 2016
  • "Three Element MIMO Antenna System with Pattern and Polarization Diversity for WLAN Applications" by Yashika Sharma, Debdeep Sarkar, Kushmanda Saurav and Prof. Kumar Vaibhav Srivastava published in IEEE Antennas and Wireless Propagation Letters, 2016
  • "A Compact Microstrip-fed Triple Band-Notched Ultra-Wideband Monopole Antenna" by Debdeep Sarkar, Prof. Kumar Vaibhav Srivastava and Kushmanda Saurav published in IEEE Antenna and Wireless Propagation Letters, vol. 13, pp. 396-399, 2014.
  • "Resource Allocation and Fairness in Wireless Powered Cooperative Cognitive Radio Networks" by Sanket S. Kalamkar, Jeya Pradha Jeyaraj, Prof. Adrish Banerjee, and Prof. Ketan Rajawat published in IEEE Transactions on Communications, Vol. 64, NO. 8, August 2016.
  • "Polarization-Insensitive Single and Broadband Switchable Absorber/ Reflector and its Realization using a Novel Biasing Technique" by Saptarshi Ghosh, and Prof. Kumar Vaibhav Srivastava published in IEEE Transactions on Antennas and Propagation, Vol. 64, no. 8, pp. 3665-3670, 2016.
  • "Multi-sensor data fusion methods for indoor localization under collinear ambiguity" by Sudhir Kumar (completed MTech. in 2015) and Prof. Rajesh M. Hegde published in Elsevier Pervasive and Mobile Computing Journal, Vol. 30, August 2016, Pages 18–31.
  • "Analytical Drain Current Modeling of Double-Gate Tunnel Field-Effect Transistors" by Arnab Pal (completed MTech. in 2015) and Prof. Aloke K. Dutta published in IEEE Transactions on Electron Devices VOL. 63, NO. 8, AUGUST 2016

Admissions - 2025-26 Semester I

The Department of Electrical Engineering offers PhD, MTech and MS by Research (MS (R)) admission with specialization in the area of

  1. Control and Automation (CA)
  2. Microelectronics and VLSI (MVLSI)
  3. Optoelectronics and Optical Communication (OPTEC)
  4. Power Engineering (PE)
  5. RF and Microwaves (RF)
  6. Signal Processing, Communication and Networks (SPCOM)

Please visit this page regularly for updates.

Apply here: Online Application Portal


Announcements

15 April 2025:

1. The tentative slots for PhD interviews are:

  • Day 1: 8 May 2025, Slot 1: 09:00 AM to 01:30 PM, Slot 2: 2 PM to 7 PM
  • Day 2: 9 May 2025, Slot 1: 09:00 AM to 01:30 PM, Slot 2: 2 PM to 7 PM
  • Mode of interview: hybrid

2. The tentative slots for MSR interviews are:

  • Day 1: 13 May 2025, Slot 1: 09:00 AM to 01:30 PM, Slot 2: 2 PM to 7 PM
  • Mode of interview: hybrid
8 April 2025:
  • Click here for the Format of No-Objection Certificate for External/ Sponsored/ Part – Time applicants seeking admission to PG programme at IIT Kanpur from Sponsoring Organization.
28 March 2025:
  • Selection criteria for the MS(R) program during 2025-2026 Semester 1:
    All candidates will be selected on the basis of marks/CPI (wherever applicable as per the eligibility criteria), GATE Score, and interview. For the purpose of shortlisting, only the first preference will be considered.
  • Selection criteria for the PhD program during 2025-2026 Semester 1:
    Candidates with Master's degree in engineering will be selected on the basis of marks/CPI and interview. Candidates with a bachelor's degree in engineering or science (4 year program) will be selected on the basis of marks/CPI, GATE score (wherever applicable as per the eligibility criteria), and an interview. For the purpose of shortlisting, only the first preference will be considered. However, candidates who have their second preference as ‘Optoelectronics and Optical Communication (OPTEC)’ or ‘Control and Automation (CA)’ or ‘Signal Processing, Communication and Networks (SPCOM)’ may also be called for interview in the respective stream, in addition to their first preference.
  • Shortlisting criteria for the MTech program during 2025-2026 Semester 1: All candidates will be shortlisted on the basis of marks/CPI (wherever applicable as per the eligibility criteria) and GATE Score (as per eligibility criteria), via the COAP portal. Additional selection criteria (if any) will be updated in this website in due course. Candidates applying for part-time, sponsored, or external registration will be selected based on interview instead of GATE score.
  • All candidates should remember to (a) upload marksheets for their qualifying degree, (b) upload their GATE score card (if applicable), (c) upload the NOC from the employer (if applicable), and (d) apply only to streams they are eligible for (see eligibility criteria).
  • Candidates belonging to OBC-NCL/EWS/SC/ST/DAP should supply appropriate category certificate issued by central government only, or else they will be admitted as general students. There is no reservation for candidates belonging to OBC category.
  • The dates for interviews (if applicable) along with other relevant details will be announced in due course of time. Please keep checking this page continuously

Please visit this page regularly for updates (most recent updates).